Prediction of Band Structure of Bi_2Te_3-related Binary and Ternary Thermoelectric Materials
Ryu, Oh, Kim, Lee, Joo, Min · cond-mat.mtrl-sci · 2016-11-14 · 原文
Density functional calculations have performed to study the band structures of Bi_2Te_3-related binary (Bi_2Te_3, Sb_2Te_3, Bi_2Se_3, and Sb_2Se_3) and Sb/Se doped ternary compounds [(Bi_{1-x}Sb_x)_2Te_3 and Bi_2(Te_{1-y}Se_y)_3]. It is found that the band gap can be increased by Sb doping and it is monotonically increased by Se doping. In ternary compounds, the change of the conduction band structure is more significant, as compared to the change of valence band. The band degeneracy of valence band maximum is maintained to be 6 in binaries and ternaries. However, as going from Bi_2Te_3 to Sb_2Te_3 (Bi_2Se_3), the degeneracy of conduction band minimum is reduced from 6 to 2(1). Based on the results of band structures, we suggest the suitable stoichiometries of ternary compounds for high thermoelectric performance.
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1. 人话版
Density functional calculations have performed to study the band structures of Bi_2Te_3-related binary (Bi_2Te_3, Sb_2Te_3, Bi_2Se_3, and Sb_2Se_3) and Sb/Se doped ternary compounds [(Bi_{1-x}Sb_x)_2Te_3 and Bi_2(Te_{1-y}Se_y)_3].
It is found that the band gap can be increased by Sb doping and it is monotonically increased by Se doping.
2. 领域脉络
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3. 机制拆解
In ternary compounds, the change of the conduction band structure is more significant, as compared to the change of valence band.
4. 证据与数字
The band degeneracy of valence band maximum is maintained to be 6 in binaries and ternaries.
However, as going from Bi_2Te_3 to Sb_2Te_3 (Bi_2Se_3), the degeneracy of conduction band minimum is reduced from 6 to 2(1).
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