A two-dimensional spin field-effect transistor
Yan, Txoperena, Llopis, Dery, Hueso, Casanova · cond-mat.mes-hall · 2016-05-30 · 原文
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin current for logic operations. The approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state. However, the still standing challenge is to find a material whose spin-orbit-coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation. Here we demonstrate a radically different approach by engineering a heterostructure from atomically thin crystals, which are "glued" by weak van der Waals (vdW) forces and which combine the superior spin transport properties of graphene with the strong SOC of the semiconducting MoS_{2}. The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS_{2} layer with a gate electrode. Our demonstration of a spin field-effect transistor using two-dimensional
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1. 人话版
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics.
Further development in spintronic devices requires electrical manipulation of spin current for logic operations.
2. 领域脉络
本文类目：cond-mat.mes-hall，属于其所在研究脉络的最新进展。
3. 机制拆解
The approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state.
4. 证据与数字
Here we demonstrate a radically different approach by engineering a heterostructure from atomically thin crystals, which are "glued" by weak van der Waals (vdW) forces and which combine the superior spin transport properties of graphene with the strong SOC of the semiconducting MoS_{2}.
The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS_{2} layer with a gate electrode.
5. 反例与边界
However, the still standing challenge is to find a material whose spin-orbit-coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation.
6. 跨领域连接与意外收获
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7. 可复用方法
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8. 术语表
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