Discovery of a two-dimensional topological insulator in SiTe
Ma, Kou, Dai, Heine · cond-mat.mtrl-sci · 2016-05-31 · 原文
Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering. Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fabrication and sizeable nontrivial gaps. Here, we demonstrate through first-principles calculations that SiTe 2D crystal is a promising 2D TI with a sizeable nontrivial gap of 0.220 eV. This material is dynamically and thermally stable. Most importantly, it could be easily exfoliated from its three-dimensional superlattice due to the weakly bonded layered structure. Moreover, strain engineering can effectively control its nontrivial gap and even induce a topological phase transition. Our results provide a realistic candidate for experimental explorations and potential applications of 2D TIs.
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1. 人话版
Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering.
Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fabrication and sizeable nontrivial gaps.
2. 领域脉络
本文类目：cond-mat.mtrl-sci，属于其所在研究脉络的最新进展。
3. 机制拆解
This material is dynamically and thermally stable.
Most importantly, it could be easily exfoliated from its three-dimensional superlattice due to the weakly bonded layered structure.
4. 证据与数字
Here, we demonstrate through first-principles calculations that SiTe 2D crystal is a promising 2D TI with a sizeable nontrivial gap of 0.220 eV.
Our results provide a realistic candidate for experimental explorations and potential applications of 2D TIs.
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