Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals
Kozawa, Pu, Shimizu, Kimura, Chiu, Matsuki · cond-mat.mtrl-sci · 2016-11-05 · 原文
Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p-n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.
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1. 人话版
Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties.
These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications.
2. 领域脉络
本文类目：cond-mat.mtrl-sci，属于其所在研究脉络的最新进展。
3. 机制拆解
In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most important devices.
4. 证据与数字
Here, we demonstrate photodetection with WSe2 monolayer films.
We prepare the electrolyte-gated ambipolar transistors and electrostatic p-n junctions are formed by the electrolyte-gating technique at 270 K.
The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak.
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