TiO_2-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)
Gale · cond-mat.mtrl-sci,cond-mat.mes-hall,cs.ET · 2016-11-09 · 原文
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.
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1. 人话版
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory.
ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory.
2. 领域脉络
本文类目：cond-mat.mtrl-sci、cond-mat.mes-hall、cs.ET，属于其所在研究脉络的最新进展。
3. 机制拆解
In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both.
We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.
4. 证据与数字
摘要未给出量化结果——留意原文的实验与数据。
5. 反例与边界
摘要未声明局限与反例——这是需要警惕的信号，精读时先问边界。
6. 跨领域连接与意外收获
横跨 3 个类目（cond-mat.mtrl-sci、cond-mat.mes-hall、cs.ET），关注其在你兴趣板块间的迁移面。
7. 可复用方法
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8. 术语表
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