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Anderson Lattice in Incommensurate \bf{Nb_3Cl_8}/Graphene van der Waals Heterostructures

Gao, Zhou, Yang, Ma, Xu, Huang · cond-mat.str-el · 2026-09-05 · 原文

The periodic Anderson model}, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a strategy for {realizing and }engineering {this model} in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb_3Cl_8) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap (Δ\approx30 meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits a nearly order-of-magnitude enhancement in the effective electron mass between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes an electrically tunable van der Waals platform for studying correlated states generated by coupling a Mott-insulating layer to an itinera

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1. 人话版

The periodic Anderson model}, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena.

Here, we introduce a strategy for {realizing and }engineering {this model} in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb_3Cl_8) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements.

2. 领域脉络

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3. 机制拆解

The heterostructure exhibits a nearly order-of-magnitude enhancement in the effective electron mass between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions.

Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases.

4. 证据与数字

Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap (Δ\approx30 meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence.

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